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| Datasheet File OCR Text: |
| SCE200CA200 thyristor module ul; e76102 m sce200ca ?featur es and advantages- ? ? ?- w new and unique gate design for higher di/ dt (integrated thyristor) w ? < = <_ = ? > ; ; w newly designed and less-layered internal structure for improved heat dissipation (low th ermal resistance). in addition to reduced layer design, soldering on both sides of chips increased the long-term reliability (two times longer than our existing products) w y ? - < ? u o ? ? q 3 ? ? ? ? = e < ? e ? l q < 2 ? h r z ? p t z e w ul recognized under ul file oe76102 w u l f ? u l f i l e o e 7 6 1 0 2 w eu rohs compliant w $ - r o h s | ? & ?applications- ?; m- w motor drives w z ; =j= =d<_=@ w powe r controller w ?? e t+ w power supplies w ?o ? maximum ratings ?? tj125? unless otherwise speci?ed?| sv ?xtj125?qb? symbol g? item y ratings y ? unit o? SCE200CA200 v rrm *repetitive peak reverse v oltage ? e??&`o ?y 2000 v v rsm *non-repetitive peak reverse v oltage ? e?? ?&`o ?y 2100 v v drm repetitive peak of f-state v oltage e??&`|? ?y 2000 v symbol g? item yy conditions y ye ratings y ? unit o? i t a v i f a v *a verage on-state forwar d curr ent ? |? q ?v s i n g l e p h a s e , h a l f w a v e , 1 8 0 ? c o n d u c t i o n , o r t ?180? ? t c 1 7 6 ? 200 a i t rms i f rms *r.m.s. on-state forwar d curr ent ? ??|? q ?v s i n g l e p h a s e , h a l f w a v e , 1 8 0 ? c o n d u c t i o n , o r t?? ?180? ? t c 1 7 6 ? 314 a i tsm i fsm *sur ge on-state forwar d curr ent ? ?|? q ?v ?cycle, 50/60hz, peak value, non-r epetitive 50 /60hzy ?; o r ty ??? t? ?y ?&` 5000/5500 a i 2 t *i 2 t ? ?v ? e u v alue for one cycle sur ge curr ent ?|? ?vt 0b? ? 125000 a 2 s p gm peak gate power dissipation e????? ? 10 w p g a v a verage gate power dissipation ??? ? 3 w i fgm peak gate curr ent e????? q ?v 3 a v fgm peak gate v oltage forwar d e????? q ?y 10 v v rgm peak gate v oltage reverse e?????o ?y 5 v di/dt critical rate of rise of on-state curr ent ??|? ?v p i g 1100ma, di g /dt10.1a/ s 500 a/s v iso *isolation br eakdown v oltage ? ? 1y a.c. 1minute ?? ?|a.c. 2500 v tj *operating junction t emperatur e ? ? ?9 s 40?130 ? t stg *storage t emperatur e ?- 9 s 40?125 ? mounting t or que ???? mount m6 ? recommended value * ? ? 2.5?3.9n~m 4.7 n ~ m t erminal m6 z? recommended value * ? ? 2.5?3.9n~m 4.7 massy? t ypical valuey a j ? 210 g ? ? ? ? ? ? ? ? ? ? ? . t d s f x j o h e f q u i n n unit o?mm ? , ( SCE200CA200 1 f b l ' p s x b s e ( b u f 7 p m u b h f e????? q ?y 7 1 f b l ( b u f 1 p x f s e????? ? 8 1 f b l ( b u f $ v s s f o u e????? q ?v " . j o j n v n ( b u f / p o 5 s j h h f s 7 p m u b h f 7 ? ??? ?y " w f s b h f ( b u f 1 p x f s ??? ? 8 ( b u f $ i b s b d u f s j t u j d t ????? ? q ( b u f $ v s s f o u ??? ?v n " ( b u f 7 p m u b h f ? ? ? ? ? ? ? ?y 7 ? . " 9 ? . " 9 ? 5 : 1 ? 5 : 1 ? . " 9 ? . " 9 ? 5 : 1 ? 5 : 1 . b y j n v n ' p s x b s e $ i b s b d u f s j t u j d t 7 g q ? q 0 o t u b u f 7 p m u b h f % s p q |? ?yy 7 5 . 7 0 o t u b u f 1 f b l $ v s s f o u |? ?v * 5 " electrical characteristicsy e?>e$e?rq tjs125s? unless otherwise speci?edszw|opdsdvr?idxtjs125s?dqdbd?s symbol pgi? item syisye conditions syrsyie ratings sypfctf unit to?a min. w7rh typ. sarj max. w7tg i drm repetitive peak of f-state curr ent d|d?o?lv tjs1130s?, v d s1v drm 50 ma i rrm *repetitive peak reverse curr ent s?poo?lv tjs1130s?, v r s1v rrm 50 ma v tm v fm *on-state sforwar ds v oltage s?d|d?srqso??y tjs125s?, i t s1600a 1.70 v tjs1130s?, i t s1600a 1.85 v t stos *thr eshold v oltage s?etfo??y tjs125s? 1.10 v tjs1130s? 1.00 rt *dynamic resistance s?d|d?osi? tjs125s? 1.08 m?h tjs1130s? 1.42 i gt gate t rigger curr ent d?s?d?d?d?do? lv v d s16v , i t s11a 100 ma v gt gate t rigger v oltage d?s?d?d?d?do??y v d s16v , i t s11a 3 v v gd gate non-t rigger v oltage d?s?d?sod?d?do??y tjs1130s?, v d s1v drm 0.25 v tgt t ur n-on time d?s?d?d|d?wp5 i t s1200a, i g s1100ma, v d s1?v drm, di g /dts10.1a/?2s 10 ?2s dv/dt critical rate of rise of of f-state v oltage lxcnd|d?o??yrrlp tjs1130s?, v d s1$vv drm , exp. waveform w|h:pth:oti0 1000 v/?2s i h holding curr ent e-w?o?lv 180 ma i l latching curr ent d?d?d?d?d?o?lv 250 ma rth sj-cs *thermal resistance s?o?osi? cont., junction to cas e , per one element hvis?s/d*s?dp5 cont., to?adddyd?d?opd4 0.155 s?/w rth sj-cs *ef fective thermal resistance s?w?i?o?osi? sin.180s? , junction to case, per one element hvis?s/d*s?dp5, sin.180s? , to?adddyd?d?opd4 0.16 s?/w r ec.120s? , junction to case, per one element hvis?s/d*s?dp5, r ec.120s? , to?adddyd?d?opd4 0.17 rth sc-ss *interface thermal resistance s?hvr?o?osi? case to heat sink, per one element d*s?ds/d?s?d?d3d?d?p5, to?adddyd?d?opd4 thermal conductivity ssilicon gr eases s17s10 s3 s|w/;2 s~ s?s d3d?dd?d?d?ddwo?o;oflps17s10 s3 s|w/;2 s~ s?s 0.10 s?/w *mark: thyristor and diode part. no mark: thyristor part. t?srsts??1dwiedxszddvd?dd?s?ptd|d?dvd|s?d?s?dwldemdto&l;d`dodbs{dfdwtldwiedxrjdtddvd?dd?s?dto&l;d`dodbs{ SCE200CA200 4 v s h f ' p s x b s e $ v s s f o u 3 b u j o h / p o 3 f q f u j u j w f ? q ?v 1? ??&` 5 j n f t ???? : o $ z d m f t 4 v s h f ' p x b s e $ v s s f o u q ?v * ' 4 . " 4 j o h m f q i b t f i b m g x b w f 5 k1 ? t u b s u ) [ ) [ 1 f s p o f f m f n f o u o?y?? p? q f s p o f & m f n f o u o?y?? ph? q f s p o f & m f n f o u o?y?? ph? k v o d u j p o u p d b t f ? ? 7-? k d k v o d u j p o u p d b t f ? ? 7-? k d k v o d u j p o u p t j o l ? ? 73?? k t k v o d u j p o u p t j o l ? ? 73?? k t 5 j n f y u t f d 5 s b o t j f o u 5 i f s n b m * n q f e b o d f a i ???e??? ? q 5 s b o t j f o u 5 i f s n b m * n q f e b o d f & & & & & & a i ? ? ? 8 k d ? ? ? ? ? $ v s s f o u w t 1 p x f s % j t t j q b u j p o 7 g ?? ? ? q " w f s b h f 0 o 4 u b u f $ v s s f o u |? ?vy * 5 " 7 " ?? ? 1 p x f s % j t t j q b u j p o y 8 1 ? ? $ v s s f o u w t " m m p x b c m f $ b t f 5 f n q f s b u v s f ?v 07 g?0-?9 s " w f s b h f 0 o t u b u f $ v s s f o u |? ?vy * 5 " 7 " " m m p x b c m f $ b t f 5 f n q f s b u v s f 7 g?0- 9 s y 5 $ ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? * % 3 . 4 $ p o e v d u j p o " o h m f ? $ p o e v d u j p o " o h m f ? 3 u i ? 8 3 u i ? 8 3 u i ? 8 3 u i ? 8 3 u i ? 8 * o u f s g b d f 5 i f s n b m * n q f e b o d f ? 8 q f s . p e v m f 3 u i ) f b u 4 j o l 5 i f s n b m * n q f e b o d f 0 v u q v u $ v s s f o u z? ?v " " n c j f o u 5 f n q f s b u v s f *?9 s? 5 p u b m 1 p x f s % j t t j q b u j p o " m m p x b c m f $ b t f 5 f n q f s b u v s f ?0- 9 s ? ? ? 8 0 v u q v u $ v s s f o u 8 ? # j e j s f d u j p o b m d p o o f d u j p o ?0 z? ?v 8 o? ? 0 v u q v u $ v s s f o u z? ?v 8 " n c j f o u 5 f n q f s b u v s f *?9 s? 5 p u b m 1 p x f s % j t t j q b u j p o " m m p x b c m f $ b t f 5 f n q f s b u v s f ? ? 8 ?0- 9 s ? 0 v u q v u $ v s s f o u # ? 5 x p q v m t f c s j e h f d p o o f d u j p o ?0 z? ?v # o ?? ? $ p o e v d u j p o " o h m f ? $ p o e v d u j p o " o h m f ? * o u f s g b d f 5 i f s n b m * n q f e b o d f ? 8 q f s . p e v m f 3 u i ) f b u 4 j o l 5 i f s n b m * n q f e b o d f 3 u i ? 8 3 u i ? 8 3 u i ? 8 3 u i ? 8 3 u i ? 8 * % " 7 * % " 7 * % 3 . 4 3 u i ? 8 3 u i ? 8 3 u i ? 8 3 u i ? 8 3 u i ? 8 # # 8 8 * o u f s g b d f 5 i f s n b m * n q f e b o d f ? 8 q f s . p e v m f 3 u i ) f b u 4 j o l 5 i f s n b m * n q f e b o d f 0 v u q v u $ v s s f o u z? ?v " " n c j f o u 5 f n q f s b u v s f *?9 s? 5 p u b m 1 p x f s % j t t j q b u j p o ? ? 8 0 v u q v u $ v s s f o u # ? 4 j y q v m t f c s j e h f d p o o f d u j p o 8 ? 5 i s f f q i b t f c j e j s f d u j p o b m d p o o f d u j p o ?0 z? ?v # ?~ ?? ? 8 ?~ o? ? " m m p x b c m f $ b t f 5 f n q f s b u v s f ?0- 9 s ? $ p o e v d u j p o " o h m f ? $ p o e v d u j p o " o h m f ? |
Price & Availability of SCE200CA200
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